METHOD OF VERTICALLY ISOLATING AND FORMING SINGLE CRYSTAL SILICON REGION

Dielectrically isolated areas of single crystalline silicon suitable for use in device applications have been produced utilizing a particular processing sequence. This sequence first involves producing an area of porous silicon on a silicon substrate. A single crystal region of silicon is then formed on the porous silicon through procedures such as molecular beam epitaxy, chemical vapor deposition or laser fusion. The region of the porous silicon under the single crystal silicon is then oxidized in a specifically controlled manner to form an insulator.