NEGATIVE FEEDBACK TYPE GAAS MICROWAVE MONOLITHIC AMPLIFIER CIRCUIT DEVICE

PURPOSE:To obtain the negative feedback type amplifier whose chip area is not large, by forming negative feedback circuit elements on a dielectric layer which is formed so as to cover the surface of active elements. CONSTITUTION:A dielectric layer 6 is formed on a GaAs FET so as to cover the entire surface of the substrate except parts 31, 41, and 51 of the electrodes of a source 3, a drain 4, and a gate 5. Then, electrode terminals 74 and 75 are formed so as to face each other on the parts of the electrodes of the drain 4 and the gate 5. A thin film resistor 8 is formed so as to connect said terminals. Thus the negative feedback type GaAs monolithic RC amplifier is completed. The value of the negative feedback capacitor C is freely selected by selecting the thickness and the dielectric constant of the dielectric layer 6 and the areas of the electrode terminals 74 and 75, and the value of a feedback resistor R is freely selected by selecting the resistivity of the thin film and the shape of the pattern.