MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To allow a cutting process for a wiring in a short time and a clean manner without the necessity of large current conduction into another element and of providing a pad for cutting by a method wherein, via an insulation film coating the wiring, a part of the metal or alloy thereof is sublimated as a compound by the energy ray irradiation, and accordingly the wiring is cut. CONSTITUTION:The clearance G part of the wiring 2 constituted of polycrystalline Si is connected by the Mo wiring 3. After forming a required wiring pattern, the wiring pattern is coated with the insulation film 4 constituted of PSG and SiO2 or Si3N4, etc. The cutting is performed by selectively irradiating the energy ray to the Mo wiring 3 via the insulation film 4. When the Mo is heated to approx. 500 deg.C or more, the Mo suddenly turns into oxide MoO3 resulting in sublimation and is diffused into the atmosphere by passing through the insulation film 4. As a result, in the polycrystalline Si wiring 2, the electrical connection is broken at the clearance G, and accordingly, a cavity 5 is generated. The Mo wiring 3 is completely eliminated by the sublimation and has no deposits of scattered matter due to fusion.