SEMICONDUCTOR LASER ELEMENT

PURPOSE:To furnish a semiconductor laser element having a structure wherein faulty short-circuiting is unlikely to occur at the time of chip bonding. CONSTITUTION:A groove 2 is provided by etching in the center of the main surface of a substrate 1 formed of n type GaAs, and a belt-shaped photoresist film 19 is connected along this groove 2. Next, an insulation film 20 formed of an CVD SiO film is provided in the regions on the opposite sides of the main surface of the exposed substrate 1 by a CVD method. Then, after the photoresist film 19 is removed, an epitaxial layer is superposed sequentially on the main surface of the substrate 1 located between a pair of insulation films 20 by a liquid-phase epitaxial method. When an element 11 thus prepared is mounted, an anode electrode 7 is fitted to a submount 12 through the intermediary of solder 21. On the occasion, no short-circuiting occurs between the separate epitaxial layers even when the sucking-up of the solder 21 takes place, since the two side surfaces of the element 11 are covered with the insulation films 20.