GROWING METHOD FOR CRYSTAL

PURPOSE:To control the concn. of the components constituting a vessel for containing of liquid for growing a crystal having electric conductivity contained in said crystal accurately over a wide range by changing the number of revolutions of said vessel in the stage of pulling up the crystal in a magnetic field. CONSTITUTION:A cooling jacket 6 is disposed on the outer side of a heating means 4 disposed in a cylindrical surface shape along the outside circumferential surface of a vessel 2, and, for example, a generating means for DC magnetic fields consisting of a permanent magnet or an electromagnet is disposed on the outer side thereof. While, for example, an Si single crystal seed 8 is rotated, said seed is pulled up in the magnetic field by the means 7 to grow an Si single crystal 10 from an Si melt 3. In this case, a vessel 2 contg. the melt 3 having electric conductivity of a certain degree, for example, a quartz crucible is rotated and the rotating speed thereof is controlled, whereby the concn. of the oxygen in the constituting components of the vessel 2 in the pulled up crystal 10 is changed.