SEMICONDUCTOR DEVICE
PURPOSE:To prevent generation of a short-circuit between electrodes of two semiconductor layers at a thyristor by a method wherein a flow preventing layer is provided at the part adjoining to a gate electrode on the surface of a P type base layer interposing an insulator layer between them. CONSTITU...
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Zusammenfassung: | PURPOSE:To prevent generation of a short-circuit between electrodes of two semiconductor layers at a thyristor by a method wherein a flow preventing layer is provided at the part adjoining to a gate electrode on the surface of a P type base layer interposing an insulator layer between them. CONSTITUTION:Out of the surface of a broad P type base layer 7 not covered with N type emitter layers 8 nor a gate electrode 9, at the part adjoining to the gate electrode 9, a loop type flow preventing layer 16 is provided. The layer 16 thereof is insulated from the P type base layer by an insulator layer 11, and is formed at the same time with the electrode 9 by evaporating a material the same with the electrode 9. Moreover it is arranged as to have the distance D of 1mm. or less between the electrode 9. An insulating layer 12 is provided as to cover the layer 16 and the electrode 9. When the device is constituted like this, the electrode 9 is covered completely by the layer 12. That is because the layer 16 prevents flow of a liquid type material when the material of the layer 12 is to be applied. Accordingly a short-circuit is not generated even when a flexible conductor layer comes in contact therewith. |
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