ELECTRON BEAM EXPOSURE

PURPOSE:To perform positioning of an existing pattern having an error and a new pattern with favorable precision by a method wherein amplitude of deflection of an electron beam is changed by changing an amplification degree of an amplifier corresponding to the error of pattern size. CONSTITUTION:An electron beam injected from an electron gun 1 is controlled by a convergent lens 2 and an electrostatically deflecting plate 4, while a material 3 to be exposed is controlled by a pulse motor 8 and a control circuit 9 thereof. A new pattern is exposed by the electron beam positioning upon an existing pattern formed on the material 3 according to a progress of optical exposure. At this time, an error of the existing pattern generated by the progress of optical exposure is applied previously to an electronic computer 5. The electronic computer 5 supplies a signal corresponding to the new pattern to the deflecting plate 4 through a D-A converter 6 and a variable amplifier 7, and at the same time, supplies a signal corresponding to the error of existing pattern to the variable amplifier 7. Accordingly amplitude of deflection is corrected, and precise positioning exposure can be attained.