SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURE

PURPOSE:To widen the width of stripes enabling fundamental lateral-mode oscillation by burying an active layer, a lower surface thereof is flat and the surface thereof is convex, into a groove. CONSTITUTION:Current stopping layers 2, 3, which have different conduction types and consist of upper and lower two layers, are formed onto a substrate 1 composed of a compound semiconductor. A clad layer 5, the surface thereof is approximately flat, is buried into the groove reaching the substrate 1 from the layers 2, 3. The active layer 6, the surface thereof is convex, is shaped onto the layer 5. A clad layer 7 is formed onto the layer 6. Consequently, there is a flat section C at the inner center of the layer 6, the scattering loss of beams is small in the flat section, and loss is large under the influence of the unevenness of the groove at the outside of the flat section C. Accordingly, the difference of the scattering loss of a fundamental mode and a higher mode is large, and stable fundamental-mode oscillation is kept even in case of high optical output.