ELECTRON BEAM TREATING DEVICE OF SEMICONDUCTOR

PURPOSE:To raise speeds of rising and spreading of an electron beam and reduce the width of energy distribution and perform effectively electron beam treatment by providing a grid for trigger. CONSTITUTION:An Si substrate 3 fixed on a bypass resistor 4 is made an anode, and Pd leak 19 is heated to release H2 in a vacuum chamber 1a, and H2 is occluded in the occlusion layer 6a of a low temperature cathode 6. Voltage is applied between terminals 9 and 17, to store electric charge in coaxial cables 8 and 15, and the potential of the cathode 6 and a grid 12 is made the same as that of the cable 8. Trigger pulses are given from a terminal 18 to discharge the gap 14 and pulses are added to the grid 12. The grid 12 is positioned opposite to the cathode 6 and on the grid 12 net-like high voltage points are distributed uniformly, and there develop, therefore, no cathode spots, and uniform electron beams are generated from the whole area with a sharp rise, and the spreading of the beam is fast, so that beams of almost the same energy are uniformly distributed, which makes it possible to perform electron beam treatment effectively and with good results.