JPS582200B
A rotary head is provided with supply chambers near the center of rotation communicating with slot-like channels extending radially to a surrounding annular space. Substrates are set into holders, such as dovetail guides in the channel walls to expose surfaces to the liquid that flows by through the...
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| creator | ROORENTSU SHUMITSUTO ERIZABESU BAUZAA MARUTEINA FURITSUKU KAARU JIIKUFURIIDO REHINAA |
| description | A rotary head is provided with supply chambers near the center of rotation communicating with slot-like channels extending radially to a surrounding annular space. Substrates are set into holders, such as dovetail guides in the channel walls to expose surfaces to the liquid that flows by through the channels from the supply chambers when the head is set into rotation. The used liquid, after it reaches the annular space, flows down into a catch basin at the bottom of a surrounding casing, which casing also has an opening at the top for loading the supply chambers. |
| format | Patent |
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Substrates are set into holders, such as dovetail guides in the channel walls to expose surfaces to the liquid that flows by through the channels from the supply chambers when the head is set into rotation. The used liquid, after it reaches the annular space, flows down into a catch basin at the bottom of a surrounding casing, which casing also has an opening at the top for loading the supply chambers.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1983</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19830114&DB=EPODOC&CC=JP&NR=S582200B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19830114&DB=EPODOC&CC=JP&NR=S582200B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ROORENTSU SHUMITSUTO</creatorcontrib><creatorcontrib>ERIZABESU BAUZAA</creatorcontrib><creatorcontrib>MARUTEINA FURITSUKU</creatorcontrib><creatorcontrib>KAARU JIIKUFURIIDO REHINAA</creatorcontrib><title>JPS582200B</title><description>A rotary head is provided with supply chambers near the center of rotation communicating with slot-like channels extending radially to a surrounding annular space. 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Substrates are set into holders, such as dovetail guides in the channel walls to expose surfaces to the liquid that flows by through the channels from the supply chambers when the head is set into rotation. The used liquid, after it reaches the annular space, flows down into a catch basin at the bottom of a surrounding casing, which casing also has an opening at the top for loading the supply chambers.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | JPS582200B |
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