MULTIPLE WAVELENGTH LIGHT DETECTING DEVICE

PURPOSE:To obtain a photovoltaic light detecting element with a longitudinal structure by separating elements by utilizing amorphous layer directly over an intermediate electrode. CONSTITUTION:A P type InP layer 21 is formed on an N type InP group. A P-N junction for a light detecting diode on the short wavelength side is formed. Then, an intermediate electrode 13 is selectively provided. A P type In1-xGaxAsy P1-y layer 12 is epitaxially grown on the entire surface of an InP layer 21 including the intermediate electrode. Then N type In1-xGaxAsyP1-y layer 22 is formed, and a light detecting diode comprising a P-N junction on the long wavelength side is formed. At this time, an In1-xGaxAsyP1-y layer, which is deposited on a part directly over the intermediate electrode 13, becomes an amorphous layer 12' and insulates and separates the layer 22. Then an upper electrode 14 and a lower electrode 15 are formed.