MANUFACTURE OF SEMICONDUCTOR ELEMENT

PURPOSE:To heat a metallic thin-film partially, and to prevent progress in the lateral direction of a reaction between the metallic thin-film and a semiconductor substrate without moving a juction of a section undesirable to heat by irradiating the lights or laser light of a wavelength larger than a limitting wavelength not absorbed to the semiconductor substrate to the metallic thin-film and reacting the thin-film and the substrate. CONSTITUTION:A diffusion preventive film 16 with a predetermined pattern is formd onto the semiconductor substrate 13 so as to form a hole at a section where the metallic thin-film 14 is shaped, and the lights or laser lights of the wavelength larger than the limitting wavelength not absorbed to the semiconductor substrate 13 through an optical system from a light source 11 under the state in which the metallic thin-film 14 is formed in the hole the of the diffusion preventive film 16. Consequently, the metallic thin-film 14 partially absorbs the lights or laser lights and is heated kartially, and a partial reaction can be progressed without degenerating a material through the heating of other sections formed to the semiconductor substrate 13. Accordingly, a diffusion layer 17 not expanding in the lateral direction can be formed onto the semiconductor substrate 13.