MAGNETO-RESISTANCE EFFECT TYPE HEAD
PURPOSE:To reduce the loss at a short wavelength region, by providing only a magneto-resistance effect element and an insulator layer between magnetic shield members and setting a magnetic bias means outside the space of the magnetic shield member to reduce the distance between magnetic shield membe...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PURPOSE:To reduce the loss at a short wavelength region, by providing only a magneto-resistance effect element and an insulator layer between magnetic shield members and setting a magnetic bias means outside the space of the magnetic shield member to reduce the distance between magnetic shield members. CONSTITUTION:Magnetic shields 1a and 1b are made of ferrite, ''Permalloy'', etc. A magneto-resistance element 3 made of ''Permalloy'', etc. with 0.05mum film thickness (t) and having a magnetization facilitating axis in the uniaxialdirection and insulated films 6 and 6 made of SiO2, Al2O3, etc. and having 0.3mum film thickness (g) are provided between shields 1a and 1b. A permanent magnet 13 for magnetic bias is set outside the space between shields 1a and 1b. The magnetic paths are shown by 15b, 16 and 15a in the figure, and a magnetic flux passes through also the element 3. Therefore the distance between shields 1a and 1b is set at t+2g=0.65mum to obtain a head which is effective even to a signal having a short wavelength of 1mum. |
---|