MANUFACTURE OF ELEMENT

PURPOSE:To form a metallic thin film in the periphery of a fine deep hole by means of a metallic material in a wide range by a method wherein a substrate having the fine hole is allowed to absorb a laser light or an ion beam energy into the metallic material under a reduced pressure resulting in fusion. CONSTITUTION:A laser light source 3 is converged by a lens 4 so as to be irradiated onto the part of the fine deep hole 1a of the semiconductor or insulation substrate 1. The metallic plate 6 for electrode material desired to adhere is mounted on a manipulator 5, then the semiconductor or insulator substrate 1 is placed on this metallic plate 6, and, when the fine laser light stopped down by the lens 4 is irradiated onto the part of the fine deep hole 1a of the substrate 1, the metalic plate 6 fuses, and thus forms electrode metallic thin films 7 in the periphery of the deep hole 1a, that is, the peripheral wall surface of the deep hole.