PREPARATION OF SINGLE CRYSTAL OF GALLIUM ARSENIDE

PREPARATION OF SINGLE CRYSTAL OF GALLIUM ARSENIDE

PURPOSE:To obtain a single crystal of gallium arsenide having a low transition density and a large area with high reproducibility, by doping a single crystal of gallium arsenide with specific amounts of silicon and zinc in the preparation thereof. 13 CONSTITUTION:In preparing single crystals of gall...

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Bibliographische Detailangaben
Hauptverfasser: KUBO NOBORU, FUJITA KEIICHIROU
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PURPOSE:To obtain a single crystal of gallium arsenide having a low transition density and a large area with high reproducibility, by doping a single crystal of gallium arsenide with specific amounts of silicon and zinc in the preparation thereof. 13 CONSTITUTION:In preparing single crystals of gallium arsenide, the single crystals are doped with (1) 1X10 -6X10 /cm silicon and (2) zinc in a larger amount than the silicon, preferably 1.5X10 -1X10 /cm , to give =10cm cross-sectional area perpendicular to the growth direction. The resultant gallium arsenide single crystals are usable as a substrate of high quality for semiconductor laser or microwave elements. Thus, the single crystals of large area provide the reduction in the preparation cost necessary for the treatment of wafers, and the low transition density provides the prolonged life and high efficiency of elements.