SEMICONDUCTOR DEVICE

PURPOSE:To prevent P-N junction penetration of an alloy bit according to Al-Si alloying by a method wherein polycrystalline Si or amorphous Si is buried in a concave part on the surface of Al or Al alloy at a contact part. CONSTITUTION:On the surface on one side of a conductive type Si substrate 1, an oppositely conductive type impurity diffusion region 4 is formed, moreover an insulating film 2 is adhered on the surface of the substrate 1, and a contact hole for an Al wiring is formed. The Al wiring material 3 is adhered thereon, while at his time, the concave part having the step difference nearly corresponding to film thickness of the insulating film under the Al material is formed on the surface of the material 3. Polycrystalline Si 9 or amorphous Si being the same material with the substrate 1 is buried in the concave part thereof. Because buried Si 9 or amorphous Si is apt to be molten in the material 3 rathere than the substrate 1, alloying reaction of Al and Si at the surface of the substrate 1 can be suppressed. Accordingly junction penetration of the alloy bit at the contact of the material 3 to the substrate 1 having shallow junction can be prevented.