SEMICONDUCTOR PHOTODETECTOR

PURPOSE:To obtain a semiconductor photodetector having simple steps, high performance and high reliability by disposing a thin insulating film partly between a P type semicondcutor crystal and an N type semiconductor crystal at the periphery of a P-N junction of the photodetector having a P-N juncti...

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Bibliographische Detailangaben
Hauptverfasser:	NAGAI HARUO, KONDOU SUSUMU, HATA SUSUMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a semiconductor photodetector having simple steps, high performance and high reliability by disposing a thin insulating film partly between a P type semicondcutor crystal and an N type semiconductor crystal at the periphery of a P-N junction of the photodetector having a P-N junction forming a guard ring. CONSTITUTION:Crystal layers 10-12 are sequentially formed on a crystal substrate 9. A crystal layer 13 of N type InP epitaxial layer is grown, electrodes 14, 15 are formed to complete it. The P-N junction between the layers 10 and 13 operates as a guard ring, and since it is not exposed with atmosphere, the reliability of the photodetector is extremely high.