LARGE CAPACITY TRANSISTOR

PURPOSE:To eliminate the inequality of emitter current by a method wherein an emitter electrode is divided into the part close to a base region and the part distant from the base region which is isolated via a clearance, and a lead wire is connected to the distant part, when a plurality of emitter regions connected in parallel are formed on a semicondctor substrate, and the emitter electrode is provided thereon. CONSTITUTION:The plurality of N emitter regions 12 connected in parallel are diffusion-formed in a P type base region 11, then an insulation film preventing the P-N junction at the boundary between the both regions, and the base electrode 2 is provided outside it and an emitter electrode inside. Thereat, the emitter electrode is divided into an outer peripheral part 31 and a central part 32 isolated by the narrow clearance 14, and an emitter lead wire 5 is bonded at the central part 32 thereof. In this manner, the emitter current 6 flowing from the region 11 to the region 12 once flows to the outer peripheral part 31 and enters again the region 12 at the part of clearance 14, and then reaches the lead wire 5 through the central part 32. Therefore, it becomes a form that balance resistance generates in the region 12.