SEMICONDUCTOR DEVICE

PURPOSE:To shorten time required for the process of forming a wiring pattern, and to correct wiring connecting semiconductor elements formed easily when the wiring is damaged by previously forming a wiring film, into which a MOS transistor is interposed, on its midway of the wiring connecting the elements. CONSTITUTION:The floating gate type MOS transistors 12A, 12 are interposed on its midway of the wiring 11A, 11 of a wiring region 1 section connecting the semiconductor elements, and the wiring is connected to the source regions 18 and drain regions 14 of the transistors. Voltage is applied among the source regions 18 and drain regions 14 of the MOS transistos formed among the wiring 11A of sections to be connected in these MOS transistors such as transistors 12A of interest shown in fig. 3 in 12A by using a ROM writer, etc. Accordingly, charges 16 are formed into a Si substrate under the floating gates 15 of the transistors, thus resulting in the conductive state of the wiring 11A by the charges.