PRETREATMENT OF SEMICONDUCTOR CRYSTAL

PURPOSE:To prevent the formation of pit and nonuniform etching of the surface of a GaSb substrate in the treatment of the substrate with a Br2-methanol etching liquid, by pretreating the substrate with concentrated sulfuric acid and dilute nitric acid. CONSTITUTION:For example, in the etching of a m...

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Bibliographische Detailangaben
Hauptverfasser:	KISHI YUTAKA, OKAZAKI JIROU
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To prevent the formation of pit and nonuniform etching of the surface of a GaSb substrate in the treatment of the substrate with a Br2-methanol etching liquid, by pretreating the substrate with concentrated sulfuric acid and dilute nitric acid. CONSTITUTION:For example, in the etching of a mirror polished undoped (001) GaSb substrate, the substrate is degreased by ultrasonic radiation in trichlene, and immersed in concentrated sulfuric acid for about 2min. Then the substrate is washed thoroughly with water, immersed in a dilute nitric acid composed of 1pt. of nitric acid and 2pts. of water for about 1min to remove the oxide layer, and again washed with water for about 3-5sec to prevent the reoxidation of the surface. Thereafter, the substrate is etched with a Br2-methanol etching liquid. A mirror etching free from pit and nonuniform etching can be achieved by this pretreatment.