GROWING METHOD FOR SINGLE CRYSTAL OF COMPOUND BY ZONE MELTING METHOD

PURPOSE:To increase the growing speed of the crystal from a low temp. flux by applying electric fields between a seed crystal and a raw material bar in such a way that, with group III-V compds., the seed crystal acts as anode and, with group II-VI compds., the seed crystal acts as cathode. CONSTITUT...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKAGI KAZUMASA, FUKAZAWA TOKUMI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!