GROWING METHOD FOR SINGLE CRYSTAL OF COMPOUND BY ZONE MELTING METHOD

PURPOSE:To increase the growing speed of the crystal from a low temp. flux by applying electric fields between a seed crystal and a raw material bar in such a way that, with group III-V compds., the seed crystal acts as anode and, with group II-VI compds., the seed crystal acts as cathode. CONSTITUTION:A molten zone 5 of a group III or group VI flux which is maintained at a specified height by a quartz tube 4 is provided between a raw material bar 1 and a seed crystal 2 mounted to jigs 3, and the zone is sealed in a quartz tube 6. Electrode wires 7 are drawn out from both ends of the bar 1 and the crystal 2. With the group III-V compds., electric fields are applied in such a way that the seed crystal 2 acts as anode; at the same time, IR light 8 is irradiated by an IR concentrating heater to heat a melt 5, whereby a crystal is grown. With the group II-VI compds., the electric fields are applied in such a way that the seed crystal 2 acts as cathode, and the zone 5 is heated by high frequency induction, whereby the crystal is grown. Thus the concn. of vacancy is decreased and the semiconductor single crystal having less stoichiometric deviations is obtained.