CHEMICAL VAPOR DEPOSITION METHOD

PURPOSE:To use economical oxides as a departing raw material and to permit vapor deposition under atmospheric pressure as well in chemical vapor deposition of hard-to-melt metal by chlorinating materials contg. the above-described oxide of metal in the presence of carboncaceous material and reducing the same on substrates. CONSTITUTION:A chemical vapor depositing device is provided with a chlorinating furnace section 2 mounted so as to extend in a quartz pipe 1 and a reaction urnace 3 on the right side thereof. Pellets 4 produced by compacting and sintering the homogeneous mixture of MoO3 and activated carbon as a starting raw material are contained in the alumina boat in the section 2 and a substrate 5 is disposed on the susceptor 6 in the furnace 3. An inert gas is introudced as a carrier gas into the section 2 and the furnace 3 through an inlet 7, and is heated with heaters 8, 9. Gaseous chlorine is introuced through an inlet 10, and the pellets 4 are delivered in the form of MoCl5 and CO or CO2 together with the above-described carrier gas and the gaseous H2 through an inlet 12 into the furnace 3 through an ejecting port 11. As a result, reduction is effected on the substrate 5 and the metallic film of Mo is obtained on the substrate 5.