LIQUID EPITAXIAL GROWTH METHOD

PURPOSE:To uniformize a film thickness of an epitaxial layer by a method wherein conditions of the electric furnace are set such that the value given by dividing the product of a boat length and a heater's inner diameter of the electric furnace by a uniform heating length of the furnace becomes...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA TOSHIO, KUME ICHIROU
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To uniformize a film thickness of an epitaxial layer by a method wherein conditions of the electric furnace are set such that the value given by dividing the product of a boat length and a heater's inner diameter of the electric furnace by a uniform heating length of the furnace becomes less than 80. CONSTITUTION:A length (l) of a boat 2, a heater's inner diameter (d) of an electric furnace and a uniform heating length L of the furnace are selected to meet the relationship expressed by the formula. For example, now assuming that the uniform heating length of the electric furnace is 300mm. and the inner diameter of the furnace is 80mm., AlxGal-xAs is developed on a GaAs substrate 30 through epitaxial growth using a boat for development of 240mm. and uniform temperature of the electric furnace is held within a range of + or -1 deg.C. The surface of an epitaxial layer 31 thus attained provides the flate state as shown in Fig. (A).