MANUFACTURE OF SEMICONDUCTOR PRESSURE CONVERTER

PURPOSE:To improve the yield by a method wherein an Si pressure sensitive element and a supporting substrate are relatively moved while they are heated in vacuum and are bonded by Au-Si eutectic alloy, so that a vacuum cavity is formed between the element and the substrate. CONSTITUTION:A substrate 1 is fitted to a groove 12 of a stand 11 and an Si pressure sensitive element 2 is fitted to a groove 14 of a weight 15. An Au film 6 is formed on the substrate 1 and pretreatment is performed on an adhering surface 6 of the element. After the device is inserted into a quartz tube 21, a vacuum is produced in the tube 21. The substrate 1 and the element 2 are heated 22 and the temperature is detected 24. At the eutectic temperature of Au-Si, a the substrate 1 is moved reciprocally with a holder 23. A friction is caused between the substrate 1 and the element 2 because the weight 15 on the element 2 can move only vertical direction by sliders 25. After the friction is continued for a prescribed period at the temperature higher than eutectic temperature of Au-Si, the temperature is lowered and the product is taken out. A substantial contact area is increased by the relative movement and the eutectic reaction can be carried out quickly and oxidization of the eutectic alloy is supressed, so that a pressure converter with excellent hermetic property can be produced with high yield.