BONDING WIRE FOR ASSEMBLING SEMICONDUCTOR DEVICE

PURPOSE:To obtain the wire, crystal grain thereof is not roughened, tensile strength thereof is large and which can bond at high speed as the results, by composing a gold wire for wire bonding used for connecting a semiconductor element electrode and an external lead of gold having high purity containing 0.0001-0.01wt% tin. CONSTITUTION:0.0001-0.01wt% tin is contained in the gold having high purity, and the bonding wire having strength required for bonding at high speed is obtained without damaging bonding property. The wt% of the tin contained in the gold having high purity is limited in this manner because electric resistance increases and the gold cannot be used as the bonding wire when the content of the tin exceeds 0.01wt% and the effect of the addition of the tin is not displayed when the content is 0.0001wt% or lower.