MANUFACTURE OF LIGHT EMITTING ELEMENT

PURPOSE:To prevent deterioration of the property by forming P, N, P layers consecutively in the exposed surface made by removing a ring and the center of the ring of a P layer formed on a wafer and by mesa etching the junction of a ring type electrode and an electrode in the center of the ring. CONSTITUTION:A ring type electrode 18 and an electrode 19 at the center of a ring are removed from a P layer formed on a Ga Al As layer 2. An electrode 19 and a P layer 4, an N layer 5 and N layer are formed on the inside surface of the ring by epitaxial method. A round cathode electrode 8 is formed on the N layer 6 formed in the center 19 by removing an electrode layer deposited on the entire surface of the wafer 3. An anode electrode of horse shoe shape is formed on the N layer 6 in the ring 18 from the periphery. The junctions of the N layer 6, N layer 5 and P layer 4 are mesa etched. This method prevents the deterioration of property and decreases manufacturing processes.