SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To obtain an extremely thin semiconductor layer by containing in advance B or P in an oixde of a substrate, adding H2 or He thereto, laminating a non-single crystalline semiconductor thereon and thermally diffusing it. CONSTITUTION:A transparent electrode 2 is formed on a glass substrate 1, an amorphous, semi-amorphous or polycrystalline semiconductor layer 4 having a crystalline boundary or irregular atomic orientation or lattic strain is laminated, thereon and a coating film of Si(OH)4 added with B or P is formed. It is then thermally diffused at 200-700 deg.C to form a true layer 14, is heat treated at 200-400 deg.C in plasma H or He, and is neutralized for unpaired bond produced by the heat treatment. This treatment is unnecessary at lower than 350 deg.C. Thus, a junction layer 16 can be formed in the layer 4 at much lower 700 deg.C than the conventional temperature by utilizng large diffusion coefficient of the non-single crystal semiconductor. When the film 13 is thereafter removed and an aluminum electrode 9 is attached, a semiconductor device having high open voltage and uniform and high conversion efficiency can be obtained.