SUBSTRATE FOR IC AND MANUFACTURE THEREOF

PURPOSE:To obtain the inexpensive, clean substrate for IC characterized by excellent heat radiation, small thermal distortion, and excellent heat resistance, by providing a semiconductor device forming layer on a polycrystalline Si substrate via an oxide film. CONSTITUTION:The semiconductor device f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SATOU YOSHIYUKI, OOHORI KATSUHIKO, KONDOU MAMORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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