SUBSTRATE FOR IC AND MANUFACTURE THEREOF

PURPOSE:To obtain the inexpensive, clean substrate for IC characterized by excellent heat radiation, small thermal distortion, and excellent heat resistance, by providing a semiconductor device forming layer on a polycrystalline Si substrate via an oxide film. CONSTITUTION:The semiconductor device forming layer 3 is provided on the polycrystalline Si substrate 1 via an oxidized film 2. Or, an insulating film 2 is formed on the polycrystalline Si substrate 1, and a polycrystalline or amorphous thin Si film 3 is deposited thereon, and said thin Si film 3 is transformed into a single crystal. The insulating film 2 is formed by oxidizing the polycrystalline Si wafer 1, or by depositing it by chemical vapor evaporation method and the like. For example, the inuslating film 2 is formed on the polycrystalline Si wafer 1, irregularities are formed on the surface by photoetching and the like, and the polycrystalline or amorphous thin film 3 is deposited thereon by the chemical vapor evaporation emthod and the like. Thereafter, the wafer is heat-treated at 1,200-1,300 deg.C, and the thin Si film 3 is transformed into a single crystal thin Si film 4.