SEMICONDUCTOR LIGHT EMITTING DEVICE AND PRODUCTION THEREOF

PURPOSE:To make uniform the current density of a device while facilitating the formation of an electrode by providing a current limiting circuit between the flat section of a grading layer surrounding a cup-shaped recessed section and a layer positioned thereabove while a larger band gap is allowed for a layer to be provided on the grading layer. CONSTITUTION:An n type Ga1-xAlxAs grading layer 2 is epitaxially grown in vapor phase under the following conditions: about 900 deg.C for the temperature of the initial growth, 0.4 for x in the initial crystal, 0.2 deg.C/min. for the decrement of the temperature, about 50mum for the thickness and 0.18 for x in the final crystal. Then, a half-insulating GaAs layer 11 and an SiO2 film 12 are applied thereon in layers and after they are covered by a photoresist film 13 having a specified hole, n cup- shaped recessed section 3 is formed entering the layer 2 by etching. Thereafter, the films 12 and 13 are removed and a p type Ga1-xAlxAs layer (x>0.4)1.4 is grown over the entire surface burying the recessed section 3 in such a manner as to be larger in the band gap than any other part of the layer 2 to creat a p-n junction. Thus, the layer 11 acts as a current channel limiting layer.