MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To abbreviate the manufacturing process of a semiconductor device and to form a uniform alloy later by a method wherein an alloy foil of Au-Si-Sb is made to come in contact with one main face of a substrate, and a brazed film is provided on the other main face at the temperature higher than the eutectic temperature of the alloy foil. CONSTITUTION:After P type region 2 is provided on the main face of the substrate 1, the alloy foil 10 of Au-Si-Sb is made to come in contact with an electrode setting region of the N type region. The alloy foil contains 11-17% of Si, 1-5% of Sb, and forms an eutectic. Then a buffer plate 6' is brazed to the P type region. Because the brazing temperature is 1,000 deg.C, the alloy foil of Au-Si-Sb being made to come in contact with the N type region can form together an alloy with the surface layer of the N type region. Accordingly the process can be abbreviated, and the uniform alloy layer can be formed.