MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To increase a close tightness between a substrate and a photo resist and obtain a minute pattern by a small amount of organic solvent by a method wherein vapor of organic solvent has been sprayed against the substrate surface previously when a photo-sensitive film is formed on the semiconductor substrate. CONSTITUTION:An SiO2 film 2 is attached to an Si substrat 1 while the vapor of organic solvent of silane system like organic chlorosilane, hexaalkyldisilazane or the like is sprayed over the entire surface, and a photo resist film 3 is coated thereon by utilizing a spin coating method, etc. Subsequently, on the foregoing structure, a photo mask containing chrome or chrome oxide which is attached selectively onto a glass substrate 4 is positioned to irradiate selectively a violet ray against a substrate 1. Thereafter, the substrate 1 is immersed in the developing toner, a film 3 at the exposure part is molten to remove it and an unexposed part 3a is left. Subsequently, a heat treatment is provided at 120 deg.C for 30min, the exposed portion of the film 2 is removed by etching with etching solution of fluorine system, and further the film 3a is removed with hydrogen plasma to obtain the film 2 having a desired pattern.