LIQUID PHASE EPITAXIAL GROWING APPARATUS

PURPOSE:To provide the titled growing apparatus reducing the growing speed at ends of a substrate and preventing abnormal growth at the ends by setting a member having lower heat conductivity than carbon forming a substrate support and a melt holder around the substrate holding part of the support. CONSTITUTION:A member 9 having lower heat conductivity than carbon forming the substrate support 2 and the melt holder 3 of said growing apparatus, e.g., quartz glass having heat conductivity 1/10-1/100 time the heat conductivity of carbon is set around the recess of the support 2, i.e., the substrate holding part. When a crystal is grown by a conventional method using the resulting liq. phase epitaxial growing apparatus, since ends of a substrate 1 are enclosed by said member 9, as the growing apparatus is slowly cooled, a temp. drop of the central part of the substrate 1 is accelerated to rapidly grow the crystal at the part. The temp. of ends of the substrate 1 is dropped slower than that of the central part to slowly grow the crystal at the ends. Accordingly, a crystal layer 7 is obtd. without forming an abnormally grown layer, i.e., a thicker grown layer at the ends. In the figure, 4a is a melt of Ga, Al and p type impurities are introduced.