LIQUID PHASE EPITAXIAL GROWING APPARATUS

LIQUID PHASE EPITAXIAL GROWING APPARATUS

PURPOSE:To prevent abnormal growth at ends of a substrate by setting a member havng lower heat conductivity than carbon forming a substrate support and a melt holder along the sliding interface between them. CONSTITUTION:A member 9 having lower heat conductivity than carbon forming a substrate suppo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: YAMAMOTO MOTOYUKI
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:PURPOSE:To prevent abnormal growth at ends of a substrate by setting a member havng lower heat conductivity than carbon forming a substrate support and a melt holder along the sliding interface between them. CONSTITUTION:A member 9 having lower heat conductivity than carbon forming a substrate support 2 and a holder 3 holding melts for liq. phase epitaxial growth, e.g., quartz glass is set along the sliding face of the holder 3 contacting with the support 2. Since the lower peripheral parts of melts 4a, 4b for liq. phase epitaxial growth are enclosed by the quartz glass having lower heat conductivity, as the growing apparatus is slowly cooled, the temp. of the bottom central part of each of the melts close to the surface of a substrate 1 becomes higher than that of the bottom peripheral part. Accordingly, a crystal layer 7 is obtd. without causing abnormal growth at ends of the substrate 1.