METHOD FOR PRECISELY PROCESSING METAL WAFER
PURPOSE:To simplify a preparation process and reduce a preparation cost to a large extent by forming a mask pattern by using electrostatic printing technique. CONSTITUTION:A metal wafer 1 of which the back surface is coated with a layer withstanding an etching liquid is prepared and a pattern image...
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| creator | HOSAKA SUSUMU |
| description | PURPOSE:To simplify a preparation process and reduce a preparation cost to a large extent by forming a mask pattern by using electrostatic printing technique. CONSTITUTION:A metal wafer 1 of which the back surface is coated with a layer withstanding an etching liquid is prepared and a pattern image is projected onto a charged photoconductive plate 6 such as a ZnO plate or the like to form an electrostatic latent image and a positive image of said pattern is obtained by developing said latent image with a toner 7. After this treatment, the toner 7 of said positive image is transferred to the surface of the metal wafer 1 to be fixed with a solvent or a solvent vapor and the exposed metal wafer 1 not masked with the toner 7 is removed by etching technique. Finally, when the mask coating layer 2 of the toner 7 is chemically peeled by mechanical brushing or by using a solvent, the metal wafer 1 with a desired pattern is obtained. |
| format | Patent |
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CONSTITUTION:A metal wafer 1 of which the back surface is coated with a layer withstanding an etching liquid is prepared and a pattern image is projected onto a charged photoconductive plate 6 such as a ZnO plate or the like to form an electrostatic latent image and a positive image of said pattern is obtained by developing said latent image with a toner 7. After this treatment, the toner 7 of said positive image is transferred to the surface of the metal wafer 1 to be fixed with a solvent or a solvent vapor and the exposed metal wafer 1 not masked with the toner 7 is removed by etching technique. Finally, when the mask coating layer 2 of the toner 7 is chemically peeled by mechanical brushing or by using a solvent, the metal wafer 1 with a desired pattern is obtained.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><creationdate>1982</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820806&DB=EPODOC&CC=JP&NR=S57126971A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19820806&DB=EPODOC&CC=JP&NR=S57126971A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOSAKA SUSUMU</creatorcontrib><title>METHOD FOR PRECISELY PROCESSING METAL WAFER</title><description>PURPOSE:To simplify a preparation process and reduce a preparation cost to a large extent by forming a mask pattern by using electrostatic printing technique. 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CONSTITUTION:A metal wafer 1 of which the back surface is coated with a layer withstanding an etching liquid is prepared and a pattern image is projected onto a charged photoconductive plate 6 such as a ZnO plate or the like to form an electrostatic latent image and a positive image of said pattern is obtained by developing said latent image with a toner 7. After this treatment, the toner 7 of said positive image is transferred to the surface of the metal wafer 1 to be fixed with a solvent or a solvent vapor and the exposed metal wafer 1 not masked with the toner 7 is removed by etching technique. Finally, when the mask coating layer 2 of the toner 7 is chemically peeled by mechanical brushing or by using a solvent, the metal wafer 1 with a desired pattern is obtained.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE |
| title | METHOD FOR PRECISELY PROCESSING METAL WAFER |
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