METHOD FOR PRECISELY PROCESSING METAL WAFER

PURPOSE:To simplify a preparation process and reduce a preparation cost to a large extent by forming a mask pattern by using electrostatic printing technique. CONSTITUTION:A metal wafer 1 of which the back surface is coated with a layer withstanding an etching liquid is prepared and a pattern image...

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1. Verfasser: HOSAKA SUSUMU
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To simplify a preparation process and reduce a preparation cost to a large extent by forming a mask pattern by using electrostatic printing technique. CONSTITUTION:A metal wafer 1 of which the back surface is coated with a layer withstanding an etching liquid is prepared and a pattern image is projected onto a charged photoconductive plate 6 such as a ZnO plate or the like to form an electrostatic latent image and a positive image of said pattern is obtained by developing said latent image with a toner 7. After this treatment, the toner 7 of said positive image is transferred to the surface of the metal wafer 1 to be fixed with a solvent or a solvent vapor and the exposed metal wafer 1 not masked with the toner 7 is removed by etching technique. Finally, when the mask coating layer 2 of the toner 7 is chemically peeled by mechanical brushing or by using a solvent, the metal wafer 1 with a desired pattern is obtained.