LIGHT EMITTING ELEMENT

PURPOSE:To produce lights of different wave lengths by providing a plurality of recombination layers between layers of a larger energy gaps and by differentiating energy gaps of recombination layers. CONSTITUTION:A P type InP buffer layer 2, a P type InGaAs P layer 3, P type InP layer 4, an N type InGaAs P layer 5 and an N type InP payer 6 are consecutively epitaxial-grown on a P type InP substrate 1. The layer 2, 4, 6 are trapping layers and the layer 4 is formed thinner than a diffusion length for the minority carrier. Energy gaps of the recombination layers 3 and 5 are 1.17eV, 0.96eV respectively and emit light of 1.06mum and 1.29mum. The lights are taken out in the direction in which the energy gaps of the recombination layer become larger.