HEAT TREATMENT OF SINGLE CRYSTAL OF TUNGSTIC ACID COMPOUND

PURPOSE:To obtain a material for a scintillator having high fluorescent intensity, by heat-treating a single crystal of a tungstic acid compound in an oxygen- containing atmosphere at a temperature within a specific range. CONSTITUTION:The single crystal of a tungstic acid compound of formula (M is...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	TAKAGI KAZUMASA, FUKAZAWA TOKUMI
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DYES INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OFSOLID INORGANIC COMPOUNDS INORGANIC CHEMISTRY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PHYSICS POLISHES PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To obtain a material for a scintillator having high fluorescent intensity, by heat-treating a single crystal of a tungstic acid compound in an oxygen- containing atmosphere at a temperature within a specific range. CONSTITUTION:The single crystal of a tungstic acid compound of formula (M is Mg, Zn and/or Cd) is heated in a mixed gas atmosphere composed of oxygen (10-100vol%) and an inert gas (e.g. nitrogen gas) at a temp. between the (m.p. -200 deg.C) and m.p.,[pref. between (m.p. -200 deg.C) and (m.p. -30 deg.C)]. Oxygen atoms diffuse from the surface of the crystal into the crystal by this heat treatment, and eliminate the oxygen vacancies produced during the crystal growing process. Consequently, the absorption of the fluorescence (wavelength of max. intensity: 480nm) can be eliminated, and the fluorescent intensity of the single crystal can be improved.