PRODUCTION OF SEMICONDUCTOR DEVICE

PURPOSE:To obtain a semiconductor device of higher density by depositing an Mo film on the poly Si film selectively formed on an Si substrate, and further forming an Al film thereon so as to be disconnected by the side faces of the Mo film.

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Bibliographische Detailangaben
1. Verfasser:	OOSONE TAKASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a semiconductor device of higher density by depositing an Mo film on the poly Si film selectively formed on an Si substrate, and further forming an Al film thereon so as to be disconnected by the side faces of the Mo film.