PRODUCTION OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent abnormal etching at the time of forming contact holes by depositing an insulation protecting film formed by vapor growth on a semiconductor substrate by way of an oxide film formed by thermal decomposition of organic compound.

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Bibliographische Detailangaben
1. Verfasser:	ARANO KAORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To prevent abnormal etching at the time of forming contact holes by depositing an insulation protecting film formed by vapor growth on a semiconductor substrate by way of an oxide film formed by thermal decomposition of organic compound.