FORMATION OF THERMAL OXIDIZED FILM

PURPOSE:To thinnly form uniform thermally-oxidized film having less pinholes by forming the thermally oxidized film on a semiconductor substrate surface in an oxidative atmosphere under reduced pressure.

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Bibliographische Detailangaben
Hauptverfasser:	MATSUZAWA MANABU, MATSUMARU YOSHIYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To thinnly form uniform thermally-oxidized film having less pinholes by forming the thermally oxidized film on a semiconductor substrate surface in an oxidative atmosphere under reduced pressure.