SEMICONDUCTOR LIGHT EMISSION DEVICE

SEMICONDUCTOR LIGHT EMISSION DEVICE

PURPOSE:A mixed crystal clad layer of AlGalnAs is formed on both sides of an active layer composed of GalnAs or AlGalnAs mixed crysta, whereby energy gap is controlled to the finest vlaue and good light closing is made possible.

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Hauptverfasser: KOTANI TAKESHI, AKITA KENZOU, NAKAJIMA KAZUO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KOTANI TAKESHI
AKITA KENZOU
NAKAJIMA KAZUO
description PURPOSE:A mixed crystal clad layer of AlGalnAs is formed on both sides of an active layer composed of GalnAs or AlGalnAs mixed crysta, whereby energy gap is controlled to the finest vlaue and good light closing is made possible.
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR LIGHT EMISSION DEVICE
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