SEMICONDUCTOR LIGHT EMISSION DEVICE

PURPOSE:A mixed crystal clad layer of AlGalnAs is formed on both sides of an active layer composed of GalnAs or AlGalnAs mixed crysta, whereby energy gap is controlled to the finest vlaue and good light closing is made possible.

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Bibliographische Detailangaben
Hauptverfasser:	KOTANI TAKESHI, AKITA KENZOU, NAKAJIMA KAZUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:A mixed crystal clad layer of AlGalnAs is formed on both sides of an active layer composed of GalnAs or AlGalnAs mixed crysta, whereby energy gap is controlled to the finest vlaue and good light closing is made possible.