MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE

MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE

PURPOSE:Formation of isolation layer is eliminated by forming mesa groove, and base layer is thinly formed. In this way, an emitter impurity transistor of high hFE can be obtained.

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Bibliographische Detailangaben
Hauptverfasser: YABUKI YOSHIBUMI, TSUYUKI TADAHARU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:Formation of isolation layer is eliminated by forming mesa groove, and base layer is thinly formed. In this way, an emitter impurity transistor of high hFE can be obtained.