SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD

PURPOSE:By forming a heterojunction with an active layer of a carrier injection type semiconductor laser of which main component is GaAs and (ZnSe) x (GaAs)1-x layer (0

Bibliographische Detailangaben

Hauptverfasser:	SERIZAWA HIROMOTO, FUKAI SHIYOUICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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