SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD

SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD

PURPOSE:By forming a heterojunction with an active layer of a carrier injection type semiconductor laser of which main component is GaAs and (ZnSe) x (GaAs)1-x layer (0

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Bibliographische Detailangaben
Hauptverfasser: SERIZAWA HIROMOTO, FUKAI SHIYOUICHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:By forming a heterojunction with an active layer of a carrier injection type semiconductor laser of which main component is GaAs and (ZnSe) x (GaAs)1-x layer (0