SEMICONDUCTOR DEVICE PROCESS

PURPOSE:In DSA-MOST, NF is improved by forming short channels well and eliminating Vp dispersion.

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Bibliographische Detailangaben
Hauptverfasser:	ISHITANI AKIYASU, SHIMADA TAKASHI, MIFUNE TADAYOSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:In DSA-MOST, NF is improved by forming short channels well and eliminating Vp dispersion.