LATERAL TRANSISTOR AND ITS PROCESS

LATERAL TRANSISTOR AND ITS PROCESS

PURPOSE:To insure fully pressure-tight and to offer lateral transistor, of which hEF does not decline, as well as its process.

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Bibliographische Detailangaben
1. Verfasser: NAKAGOME YOSHIYUKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE:To insure fully pressure-tight and to offer lateral transistor, of which hEF does not decline, as well as its process.