SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS PRODUCING METHOD

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS PRODUCING METHOD

PURPOSE:To obtain a semiconductor integrated circuit device equipped with a lateral transistor which is improved in voltage withstand not to be dropped down in hEE by detaching a active region composed of a emitter and a collector from a base electrode pick-up region through a insulation body.

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Bibliographische Detailangaben
1. Verfasser: NAKAGOME YOSHIYUKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To obtain a semiconductor integrated circuit device equipped with a lateral transistor which is improved in voltage withstand not to be dropped down in hEE by detaching a active region composed of a emitter and a collector from a base electrode pick-up region through a insulation body.